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CT3A01-R3 Arkusz danych(PDF) 1 Page - CT Micro International Corporation |
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CT3A01-R3 Arkusz danych(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 4 Proprietary & Confidential Page 1 Jun, 2015 CT3A01-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features •••• Drain-Source Breakdown Voltage VDSS 20 V •••• Drain-Source On-Resistance •••• RDS(ON) 55m Ω, at VGS= 4.5V, ID=3.2A RDS(ON) 65m Ω, at VGS= 2.5V, ID= 2.5A RDS(ON) 80m Ω, at VGS= 1.8V, ID= 2.0A •••• Continuous Drain Current at TA=25 ℃ID = 3.2A •••• Advanced high cell density Trench Technology •••• RoHS Compliance & Halogen Free Applications •••• Power Management •••• Portable Equipment •••• Load switch Description The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Gate Source Drain Gate Drain Source |
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