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CLC5622 Arkusz danych(PDF) 2 Page - National Semiconductor (TI) |
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CLC5622 Arkusz danych(HTML) 2 Page - National Semiconductor (TI) |
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2 / 12 page ![]() http://www.national.com 2 PARAMETERS CONDITIONS TYP MIN/MAX RATINGS UNITS NOTES Ambient Temperature CLC5622IN/IM +25°C +25°C 0 to 70°C -40 to 85°C FREQUENCY DOMAIN RESPONSE -3dB bandwidth Vo = 0.5Vpp 130 100 90 85 MHz Vo = 2.0Vpp 95 80 77 75 MHz -0.1dB bandwidth Vo = 0.5Vpp 30 25 20 20 MHz gain peaking <200MHz, Vo = 0.5Vpp 0 0.5 0.9 1.3 dB gain rolloff <30MHz, Vo = 0.5Vpp 0.1 0.4 0.6 0.6 dB linear phase deviation <30MHz, Vo = 0.5Vpp 0.15 0.3 0.4 0.4 deg differential gain NTSC, RL = 150Ω to -1V 0.03 – – – % differential phase NTSC, RL = 150Ω to -1V 0.07 – – – deg TIME DOMAIN RESPONSE rise and fall time 2V step 4.5 6.0 6.4 6.8 ns settling time to 0.05% 1V step 17 25 40 60 ns overshoot 2V step 11 15 18 18 % slew rate 2V step 280 195 165 150 V/ µs DISTORTION AND NOISE RESPONSE 2nd harmonic distortion 2Vpp, 1MHz -79 -76 -73 -73 dBc 2Vpp, 1MHz; RL = 1kΩ -80 -78 -75 -75 dBc 2Vpp, 5MHz -66 -60 -58 -58 dBc 3rd harmonic distortion 2Vpp, 1MHz -85 -82 -79 -79 dBc 2Vpp, 1MHz; RL = 1kΩ -83 -81 -78 -78 dBc 2Vpp, 5MHz -65 -62 -60 -60 dBc equivalent input noise voltage (eni) >1MHz 3.4 4.4 4.9 4.9 nV/ √Hz non-inverting current (ibn) >1MHz 6.3 8.2 9.0 9.0 pA/ √Hz inverting current (ibi) >1MHz 8.7 11.3 12.4 12.4 pA/ √Hz crosstalk (input referred) 10MHz, 1Vpp -72 – – – dB STATIC DC PERFORMANCE input offset voltage 1 4 6 6 mV A average drift 8 – – – µV/˚C input bias current (non-inverting) 6 18 22 24 µAA average drift 40 – – – nA/˚C input bias current (inverting) 6 14 16 17 µAA average drift 25 – – – nA/˚C power supply rejection ratio DC 48 45 43 43 dB common-mode rejection ratio DC 47 45 43 43 dB supply current per channel RL= ∞ 3.0 3.4 3.6 3.6 mA A MISCELLANEOUS PERFORMANCE input resistance (non-inverting) 0.36 0.26 0.23 0.23 M Ω input capacitance (non-inverting) 1.8 2.75 2.75 2.75 pF input voltage range, High 4.2 4.1 4.1 4.0 V input voltage range, Low 0.8 0.9 0.9 1.0 V output voltage range, High RL = 100Ω 4.0 3.9 3.9 3.8 V output voltage range, Low RL = 100Ω 1.0 1.1 1.1 1.2 V output voltage range, High RL = ∞ 4.1 4.0 4.0 3.9 V output voltage range, Low RL = ∞ 0.9 1.0 1.0 1.1 V output current 100 80 65 40 mA B output resistance, closed loop DC 70 105 105 140 m Ω Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. +5V Electrical Characteristics (A v = +2, Rf = 750Ω,RL = 100Ω,Vs = +5V 1,Vcm = VEE + (Vs/2), RL tied to Vcm, unless specified) Absolute Maximum Ratings supply voltage (VCC - VEE) +14V output current (see note C) 140mA common-mode input voltage VEE to VCC maximum junction temperature +150°C storage temperature range -65°C to +150°C lead temperature (soldering 10 sec) +300°C ESD rating (human body model) 1000V Notes A) J-level: spec is 100% tested at +25°C. B) The short circuit current can exceed the maximum safe output current. 1) Vs = VCC - VEE Reliability Information Transistor Count 98 MTBF (based on limited test data) 300Mhr |
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