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CLC5622 Arkusz danych(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numer części CLC5622
Szczegółowy opis  Dual, High Output, Video Amplifier
PDF  12 Pages
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Producent  NSC [National Semiconductor (TI)]
Strona internetowa  http://www.national.com
Logo NSC - National Semiconductor (TI)

CLC5622 Arkusz danych(HTML) 2 Page - National Semiconductor (TI)

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PARAMETERS
CONDITIONS
TYP
MIN/MAX RATINGS
UNITS
NOTES
Ambient Temperature
CLC5622IN/IM
+25°C
+25°C
0 to 70°C
-40 to 85°C
FREQUENCY DOMAIN RESPONSE
-3dB bandwidth
Vo = 0.5Vpp
130
100
90
85
MHz
Vo = 2.0Vpp
95
80
77
75
MHz
-0.1dB bandwidth
Vo = 0.5Vpp
30
25
20
20
MHz
gain peaking
<200MHz, Vo = 0.5Vpp
0
0.5
0.9
1.3
dB
gain rolloff
<30MHz, Vo = 0.5Vpp
0.1
0.4
0.6
0.6
dB
linear phase deviation
<30MHz, Vo = 0.5Vpp
0.15
0.3
0.4
0.4
deg
differential gain
NTSC, RL = 150Ω to -1V
0.03
%
differential phase
NTSC, RL = 150Ω to -1V
0.07
deg
TIME DOMAIN RESPONSE
rise and fall time
2V step
4.5
6.0
6.4
6.8
ns
settling time to 0.05%
1V step
17
25
40
60
ns
overshoot
2V step
11
15
18
18
%
slew rate
2V step
280
195
165
150
V/
µs
DISTORTION AND NOISE RESPONSE
2nd harmonic distortion
2Vpp, 1MHz
-79
-76
-73
-73
dBc
2Vpp, 1MHz; RL = 1kΩ
-80
-78
-75
-75
dBc
2Vpp, 5MHz
-66
-60
-58
-58
dBc
3rd harmonic distortion
2Vpp, 1MHz
-85
-82
-79
-79
dBc
2Vpp, 1MHz; RL = 1kΩ
-83
-81
-78
-78
dBc
2Vpp, 5MHz
-65
-62
-60
-60
dBc
equivalent input noise
voltage (eni)
>1MHz
3.4
4.4
4.9
4.9
nV/
√Hz
non-inverting current (ibn)
>1MHz
6.3
8.2
9.0
9.0
pA/
√Hz
inverting current (ibi)
>1MHz
8.7
11.3
12.4
12.4
pA/
√Hz
crosstalk (input referred)
10MHz, 1Vpp
-72
dB
STATIC DC PERFORMANCE
input offset voltage
1
4
6
6
mV
A
average drift
8
µV/˚C
input bias current (non-inverting)
6
18
22
24
µAA
average drift
40
nA/˚C
input bias current (inverting)
6
14
16
17
µAA
average drift
25
nA/˚C
power supply rejection ratio
DC
48
45
43
43
dB
common-mode rejection ratio
DC
47
45
43
43
dB
supply current per channel
RL= ∞
3.0
3.4
3.6
3.6
mA
A
MISCELLANEOUS PERFORMANCE
input resistance (non-inverting)
0.36
0.26
0.23
0.23
M
input capacitance (non-inverting)
1.8
2.75
2.75
2.75
pF
input voltage range, High
4.2
4.1
4.1
4.0
V
input voltage range, Low
0.8
0.9
0.9
1.0
V
output voltage range, High
RL = 100Ω
4.0
3.9
3.9
3.8
V
output voltage range, Low
RL = 100Ω
1.0
1.1
1.1
1.2
V
output voltage range, High
RL = ∞
4.1
4.0
4.0
3.9
V
output voltage range, Low
RL = ∞
0.9
1.0
1.0
1.1
V
output current
100
80
65
40
mA
B
output resistance, closed loop
DC
70
105
105
140
m
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
+5V Electrical Characteristics (A
v = +2, Rf = 750Ω,RL = 100Ω,Vs = +5V
1,Vcm = VEE + (Vs/2), RL tied to Vcm, unless specified)
Absolute Maximum Ratings
supply voltage (VCC - VEE)
+14V
output current (see note C)
140mA
common-mode input voltage
VEE to VCC
maximum junction temperature
+150°C
storage temperature range
-65°C to +150°C
lead temperature (soldering 10 sec)
+300°C
ESD rating (human body model)
1000V
Notes
A) J-level: spec is 100% tested at +25°C.
B) The short circuit current can exceed the maximum safe
output current.
1) Vs = VCC - VEE
Reliability Information
Transistor Count
98
MTBF (based on limited test data)
300Mhr



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