ACE7409B

P-Channel 30-V (D-S) MOSFET

VER 1.1

2

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

-30

V

Zero Gate Voltage Drain

Current

-1

uA

Gate Threshold Voltage

V

GS(TH)

V

-1

-1.3

-3

V

Gate Leakage Current

I

GSS

±100

nA

Drain-Source On-state

Resistance

11

14

m

Ω

13

20

Forward Transconductance

20

S

Diode Forward Voltage

-0.8

-1.3

V

Switching

Total Gate Charge

68.12

nC

Gate-Source Charge

8

Gate-Drain Charge

10.12

Turn-On Delay Time

20.4

ns

Turn-On Rise Time

8.96

Turn-Off Delay Time

131.8

Turn-Off Fall Time

47.2

Dynamic

Input Capacitance

f=1MHz

3204.2

pF

Output Capacitance

492

Reverse Transfer Capacitance

415

Note:

A.

The maximum current rating is package limited.

B.

The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

C.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency

and duty cycles to keep initial TJ =25°C.

D.

The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.

E.

These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a

large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single

pulse rating.

F.

The maximum current rating is package limited.

G.

These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C