IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYP30N65C3

IXYH30N65C3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

11

19

S

C

1225

pF

C

oes

V

75

pF

C

res

28

pF

Q

g(on)

44

nC

Q

ge

I

7

nC

Q

gc

24

nC

t

d(on)

21

ns

t

ri

42

ns

E

on

1.00

mJ

t

d(off)

75

ns

t

fi

24

ns

E

0.27

mJ

t

d(on)

19

ns

t

ri

40

ns

E

on

1.50

mJ

t

d(off)

90

ns

t

fi

30

ns

E

off

0.41

mJ

R

thJC

0.55 °C/W

R

thCS

TO-220

0.50

°C/W

R

thCS

TO-247

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

e

P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-220 Outline