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Zakładka z wyszukiwarką danych komponentów |
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DMN65D8LDW Arkusz danych(PDF) 2 Page - Diodes Incorporated |
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DMN65D8LDW Arkusz danych(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN65D8LDW Document number: DS35500 Rev. 8 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN65D8LDW Maximum Ratings (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 180 140 mA Continuous Drain Current (Note 5) VGS = 5V Steady State TA = +25°C TA = +70°C ID 150 120 mA Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 200 160 mA Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 170 140 mA Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 435 °C/W Total Power Dissipation (Note 6) PD 400 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 330 °C/W Thermal Resistance, Junction to Case (Note 6) RθJC 139 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C TJ = +125°C (Note 8) IDSS 1.0 5.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ±5.0 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 2.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) 8 Ω VGS = 5.0V, ID = 0.115A 6 Ω VGS = 10.0V, ID = 0.115A Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A Diode Forward Voltage VSD — 0.8 1.2 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 22.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 3.2 Reverse Transfer Capacitance Crss 2.0 Gate Resistance RG 79.9 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge VGS = 10V Qg 0.87 nC VGS = 10V, VDS = 30V, ID = 150mA Total Gate Charge VGS = 4.5V Qg 0.43 Gate-Source Charge Qgs 0.11 Gate-Drain Charge Qgd 0.11 Turn-On Delay Time tD(on) 3.3 nS VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω Turn-On Rise Time tr 3.2 Turn-Off Delay Time tD(off) 12.0 Turn-Off Fall Time tf 6.3 Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
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