BST70 datasheet(2/12 Pages) PHILIPS

Numer części	BST70

Szczegółowy opis	N-channel vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

Producent	PHILIPS [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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2 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel vertical D-MOS transistor

BST70A

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in TO-92

variant envelope and intended for use

in relay, high-speed and

line-transformer drivers.

FEATURES:

• Very low R

DS(on)

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No second breakdown

QUICK REFERENCE DATA

PINNING - TO-92 VARIANT

Drain-source voltage

VDS

max.

80 V

Gate-source voltage (open drain)

VGSO

max.

20 V

Drain current (DC)

max.

0.5 A

Total power dissipation up to Tamb =25 °CPtot

max.

1 W

Drain-source ON-resistance

typ.

max.

Ω

ID = 500 mA; VGS = 10 V

RDS(on)

Transfer admittance

ID = 500 mA; VDS = 15 V

 Yfs 

typ.

300 mS

= source

= gate

= drain

PIN CONFIGURATION

Fig.1 Simplified outline and symbol.

Note: Various pinout configurations available.

handbook, halfpage

MAM146

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