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IRFS610A Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części IRFS610A
Szczegółowy opis  isc Silicon NPN Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFS610A Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRFS610A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
2.5
A
IDM
Drain Current-Single Pluse
10
A
PD
Total Dissipation @TC=25℃
22
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
5.71
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W
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