www.ixysic.com

DS-CPC3703-R07

1

CPC3703

250V N-Channel

Depletion-Mode FET

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

250V

4



360mA

SOT-89

Applications

Features

Description

Ordering Information

Circuit Symbol

 max. at 25ºC

DS(on)

at Cold Temperatures

The CPC3703 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high

input impedance, for use in high-power applications.

The CPC3703 is a highly reliable device that has

been used extensively in our Solid State Relays for

industrial and telecommunications applications.

This device excels in power applications that require

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3703 offers a low, 4

 maximum, on-state

resistance at 25ºC.

The CPC3703 has a minimum breakdown voltage of

250V, and is available in an SOT-89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

Package Pinout

(SOT-89)

G

D

S

D

S

G

D

Part #

Description

CPC3703CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)