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CPC3708Z Arkusz danych(PDF) 1 Page - IXYS Corporation

Numer części CPC3708Z
Szczegółowy opis  Depletion Mode FET
PDF  6 Pages
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC3708Z Arkusz danych(HTML) 1 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
www.ixysic.com
DS-CPC3708-R03
1
CPC3708
350V N-Channel
Depletion Mode FET
Part Number
Description
CPC3708CTR
SOT-89: Tape and Reel (1000/Reel)
CPC3708ZTR
SOT-223: Tape and Reel (1000/Reel)
Applications
Features
Description
Ordering Information
Package Pinout:
LED Drive Circuits
Telecommunications
Normally On Switches
Ignition Modules
Converters
Security
Power Supplies
Regulators
350V Drain-to-Source Voltage
Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
Low On-Resistance: 8
 (Typical) @ 25°C
Low V
GS(off) Voltage
High Input Impedance
Low Input and Output Leakage
Small Package Size SOT-89 and SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
The CPC3708 is a N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3708Z) and an SOT-89
package (CPC3708C). Both utilize IXYS Integrated
Circuits Division’s proprietary third-generation
vertical DMOS process that realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device, particularly for
use in difficult application environments such as
telecommunications, security, and power supplies.
CPC3708Z and the CPC3708C have a typical
on-resistance of 8
 and a drain-to-source voltage
of 350V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Pin Number
Name
1GATE
2
DRAIN
3
SOURCE
4
DRAIN
Parameter
Rating
Units
Drain-to-Source Voltage - V
(BR)DSX
350
V
Max On-Resistance - R
DS(on)
14
Max Power
SOT-89 Package
1.1
W
SOT-223 Package
2.5
Circuit Symbol
D
G
D
S
4
123
D
S
G


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