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CPC3708Z Arkusz danych(PDF) 1 Page - IXYS Corporation |
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CPC3708Z Arkusz danych(HTML) 1 Page - IXYS Corporation |
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1 / 6 page ![]() INTEGRATED CIRCUITS DIVISION www.ixysic.com DS-CPC3708-R03 1 CPC3708 350V N-Channel Depletion Mode FET Part Number Description CPC3708CTR SOT-89: Tape and Reel (1000/Reel) CPC3708ZTR SOT-223: Tape and Reel (1000/Reel) Applications Features Description Ordering Information Package Pinout: • LED Drive Circuits • Telecommunications • Normally On Switches • Ignition Modules • Converters • Security • Power Supplies • Regulators • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low R DS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low V GS(off) Voltage • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-89 and SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings The CPC3708 is a N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3708Z) and an SOT-89 package (CPC3708C). Both utilize IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies. CPC3708Z and the CPC3708C have a typical on-resistance of 8 and a drain-to-source voltage of 350V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown. Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN Parameter Rating Units Drain-to-Source Voltage - V (BR)DSX 350 V Max On-Resistance - R DS(on) 14 Max Power SOT-89 Package 1.1 W SOT-223 Package 2.5 Circuit Symbol D G D S 4 123 D S G |
Podobny numer części - CPC3708Z |
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Podobny opis - CPC3708Z |
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