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CPC44055ST Arkusz danych(PDF) 3 Page - IXYS Corporation |
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CPC44055ST Arkusz danych(HTML) 3 Page - IXYS Corporation |
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3 / 8 page ![]() INTEGRATED CIRCUITS DIVISION 3 www.ixysic.com R02 CPC44055ST 2 Thermal Characteristics 2.1 Heat Sink Calculation Higher load currents are possible by using lower thermal resistance heat sink combinations. 2.2 Thermal Performance Data Parameter Conditions Symbol Rating Units Thermal Resistance (Junction to Case) - JC 0.35 °C/W Thermal Resistance (Junction to Ambient) Free Air JA 27 °C/W Junction Temperature (Operating) - TJ -40 to +100 °C θ CA = - θ JC (T J - TA) P D T J = Junction Temperature (°C), TJ ≤ 150°C * T A = Ambient Temperature (°C) θ JC = Thermal Resistance, Junction to Case (°C/W) = 0.35°C/W θ CA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W) P D = On-State Voltage (Vrms) • Load Current (Arms) * Elevated junction temperature reduces semiconductor lifetime. NOTE: The exposed surface of the DCB substrate is not to be soldered. Heat Sink Rating Ambient Temperature (ºC) 0 1020 30 40 5060 70 8090 0 5 10 15 20 25 30 35 40 Output Power Dissipation vs. Ambient Temperature Heat Sink 2ºC/W 5ºC/W 10ºC/W 15ºC/W No Heat Sink Load Current (A rms) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 Output Power Dissipation vs. Load Current |
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