IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK66N85X

IXFX66N85X

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2,4 - Drain

3 - Source

TO-264P Outline

2,4 = Drain

3 = Source

4

c

A

b

D

R

Q

A

E

D1

D2

R1

L1

Q1

E1

b1

e

b2

x2

1

2

3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

25

42

S

R

Gi

Gate Input Resistance

0.75



C

iss

8900

pF

C

oss

V

8900

pF

C

rss

142

pF

C

o(er)

294

pF

C

o(tr)

1270

pF

t

d(on)

40

ns

t

r

48

ns

t

d(off)

105

ns

t

f

20

ns

Q

g(on)

230

nC

Q

gs

V

53

nC

Q

gd

113

nC

R

thJC

0.10

C/W

R

thCS

0.15

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

66

A

I

SM

Repetitive, Pulse Width Limited by T

JM

264

A

V

SD

I

1.4

V

t

rr

250

ns

Q

RM

2.7



μC

I

RM

21.7

A

I

V