IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN90N85X

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

90

A

I

SM

Repetitive, Pulse Width Limited by T

JM

360

A

V

SD

I

1.4

V

t

rr

250

ns

Q

RM

5.3



μC

I

RM

42.0

A

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

37

62

S

R

Gi

Gate Input Resistance

0.60



C

iss

13.3

nF

C

oss

V

13.0

nF

C

rss

220

pF

C

o(er)

395

pF

C

o(tr)

1820

pF

t

d(on)

50

ns

t

r

20

ns

t

d(off)

126

ns

t

f

8

ns

Q

g(on)

340

nC

Q

gs

V

78

nC

Q

gd

190

nC

R

thJC

0.104

C/W

R

thCS

0.05

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)