BUW1015 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.78

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1500 V

Tj = 125

0.2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

700

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 10 A

IB = 2 A

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 10 A

IB = 2 A

1.5

hFE

∗

DC Current Gain

IC = 10 A

VCE = 5 V

IC = 10 A

VCE = 5 V

Tj = 100

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 400 V

IC = 10 A

IB1 = 2 A

IB2= -6 A

1.5

110

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 10 A

f = 31250 Hz

IB1 = 2 A

IB2 = -6 A

Vceflyback = 1200 sin







6





220

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 6 A

f = 64 KHz

IB1 = 1 A

Vbeoff = - 2 V

Vceflyback = 1100 sin







6





3.7

200

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUW1015

2/7

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