ZXMP6A16DN8Q

Document number: DS36687 Rev. 2 - 2

2 of 8

www.diodes.com

December 2013

© Diodes Incorporated

ZXMP6A16DN8Q

Characteristic

Symbol

Value

Unit

Drain-Source voltage

-60

V

Gate-Source voltage

(Note 6)

20

V

Continuous Drain current

(Notes 8 & 10)

-3.9

A

-3.1

(Notes 7 & 10)

-2.9

Pulsed Drain current

(Notes 9 & 10)

-18.3

A

Continuous Source current (Body diode)

(Notes 8 & 10)

-3.2

A

Pulsed Source current (Body diode)

(Notes 9 & 10)

-18.3

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Notes 7 & 10)

1.25

10.0

W

mW/°C

(Notes 7 & 11)

1.81

14.5

(Notes 8 & 10)

2.15

17

Thermal Resistance, Junction to Ambient

(Notes 7 & 10)

100

°C/W

(Notes 7 & 11)

70

(Notes 8 & 10)

60

Thermal Resistance, Junction to Lead

(Notes 10 & 12)

48.85

Operating and storage temperature range

-55 to +150

°C

Notes:

7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

8. Same as note (7), except the device is measured at t

 10 sec.

9. Same as note (7), except the device is pulsed with D = 0.02 and pulse width 300µs.

10. For a dual device with one active die.

11. For a device with two active die running at equal power.

12. Thermal resistance from junction to solder-point.