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DN3525 Arkusz danych(PDF) 2 Page - Supertex, Inc

Numer części DN3525
Szczegółowy opis  N-Channel Depletion-Mode
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  SUTEX [Supertex, Inc]
Strona internetowa  http://www.supertex.com
Logo SUTEX - Supertex, Inc

DN3525 Arkusz danych(HTML) 2 Page - Supertex, Inc

  DN3525_13 Datasheet HTML 1Page - Supertex, Inc DN3525_13 Datasheet HTML 2Page - Supertex, Inc DN3525_13 Datasheet HTML 3Page - Supertex, Inc DN3525_13 Datasheet HTML 4Page - Supertex, Inc DN3525_13 Datasheet HTML 5Page - Supertex, Inc  
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Supertex inc.
www.supertex.com
Doc.# DSFP-DN3525
C062813
DN3525
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Electrical Characteristics (T
A = 25
O
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSX
Drain-to-source breakdown voltage
250
-
-
V
V
GS = -5.0V, ID = 100µA
V
GS(OFF)
Gate-to-source off voltage
-1.5
-
-3.5
V
V
DS = 15V, ID = 1.0mA
ΔV
GS(OFF)
Change in V
GS(OFF) with temperature
-
-
-4.5
mV/OC V
DS = 15V, ID = 1.0mA
I
GSS
Gate body leakage current
-
-
100
nA
V
GS = ±20V, VDS = 0V
I
D(OFF)
Drain-to-source leakage current
-
-
1.0
µA
V
DS = Max rating, VGS = -5.0V
-
-
1.0
mA
V
DS = 0.8 Max Rating,
V
GS = -5.0V, TA = 125
O
C
I
DSS
Saturated drain-to-source current
300
-
-
mA
V
GS = 0V, VDS = 15V
R
DS(ON)
Static drain-to-source on-state
resistance
-
-
6.0
Ω
V
GS = 0V, ID = 200mA
ΔR
DS(ON)
Change in R
DS(ON) with temperature
-
-
1.1
%/OC
V
GS = 0V, ID = 200mA
G
FS
Forward transconductance
225
-
-
mmho V
DS = 10V, ID = 150mA
C
ISS
Input capacitance
-
270
350
pF
V
GS = -5.0V,
V
DS = 25V,
f = 1.0MHz
C
OSS
Common source output capacitance
-
20
60
C
RSS
Reverse transfer capacitance
-
5.0
20
t
d(ON)
Turn-on delay time
-
-
20
ns
V
DD = 25V,
I
D = 150mA,
R
GEN = 25Ω,
V
GS = 0V to -10V
t
r
Rise time
-
-
25
t
d(OFF)
Turn-off delay time
-
-
25
t
f
Fall time
-
-
40
V
SD
Diode forward voltage drop
-
-
1.8
V
V
GS = -5.0V, ISD = 150mA
t
rr
Reverse recovery time
-
800
-
ns
V
GS = -5.0V, ISD = 150mA
Notes:
1.
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Thermal Characteristics
Package
I
D
(continuous)†
I
D
(pulsed)
Power Dissipation
@T
A = 25
O
C
I
DR
†
I
DRM
TO-243AA
360mA
1.0A
1.6W‡
360mA
1.0A
Notes:
† I
D (continuous) is limited by max rated TJ.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit



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