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IPS024G Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IPS024G
Szczegółowy opis  QUAD FULLY PROTECTED POWER MOSFET SWITCH
PDF  10 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IPS024G Arkusz danych(HTML) 2 Page - International Rectifier

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IPS024G
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70
µm copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
—
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1)
(∑ lsd mosfets, rth=125oC/W)
—
2.3
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet)
—10
Pd
Maximum power dissipation
(1)
(∑ Pd mosfets, rth=125oC/W)
—
1
W
ESD1
Electrostatic discharge voltage (Human Body)
—
4
C=100pF, R=1500
Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
C=200pF, R=0
Ω, L=10µH
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
V
A
kV
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
(4 mos on)
(4 mosfets on)
—
75
—
Rth2
Thermal resistance with standard footprint
(1mos on)
(1 mosfet on)
—
120
—
Rth3
Thermal resistance with 1" square footprint
(4 mos on)
(4 mosfets on)
—
60
—
Thermal Characteristics
oC/W
oC



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