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If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

+90V

Bias Voltage (V

+16V

Input Voltage (V

0Vto6V

Storage Temperature Range (T

−65˚C to +150˚C

Lead Temperature

300˚C

ESD Tolerance, Human Body

Model

2kV

Machine Model

250V

Operating Ranges (Note 2)

V

CC

+60V to +85V

V

BB

+8V to +15V

V

IN

+0V to +5V

V

OUT

+15V to +75V

Case Temperature

−20˚C to +100˚C

Do not operate the part without a heat sink.

Electrical Characteristics

(See Figure 2 for Test Circuit) Unless otherwise noted: V

at 1 MHz, T

Symbol

Parameter

Conditions

LM2436

Units

Min

Typical

Max

I

CC

Supply Current

All Three Channels, No Input Signal,

No Output Load

30

mA

I

BB

Bias Current

All Three Channels

12

mA

V

OUT

DC Output Voltage

No AC Input Signal, V

62

65

68

V

DC

A

V

DC Voltage Gain

No AC Input Signal

−12

−14

−16

∆A

V

Gain Matching

(Note 4), No AC Input Signal

1.0

dB

LE

Linearity Error

(Notes 4, 5), No AC Input Signal

8

%

t

R

Rise Time

(Note 6), 10% to 90%

7.5

ns

t

F

Fall Time

(Note 6), 90% to 10%

7.5

ns

OS

Overshoot

(Note 6)

1

%

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

Note 2: Operating ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and

test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may

change when the device is not operated under the listed test conditions.

Note 3: All voltages are measured with respect to GND, unless otherwise specified.

Note 4: Calculated value from Voltage Gain test on each channel.

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