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MSN6004Z Arkusz danych(PDF) 4 Page - MORE Semiconductor Company Limited

Numer części MSN6004Z
Szczegółowy opis  600V(D-S) N-Channel Enhancement Mode Power MOS FET
PDF  5 Pages
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Producent  MORESEMI [MORE Semiconductor Company Limited]
Strona internetowa  http://www.moresemi.com/
Logo MORESEMI - MORE Semiconductor Company Limited

MSN6004Z Arkusz danych(HTML) 4 Page - MORE Semiconductor Company Limited

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MSN6004Z
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10%
10%
50%
50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
10
1
10
2
10
0
10
3
10
1
10
0
10
-1
10ms
1ms
DC
100ms
RDS(ON)Limit
Single Pulse
TC=25 C
TJ=175 C
10
-2
10
8
6
4
2
0
0
2
4
6
10
8
VDS=480V
ID=4A
10
0
10
-1
10
-2
10
0
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10%
10%
50%
50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
10
1
10
2
10
0
10
3
10
1
10
0
10
-1
10ms
1ms
DC
100ms
RDS(ON)Limit
Single Pulse
TC=25 C
TJ=175 C
10
-2
10
8
6
4
2
0
0
2
4
6
10
8
VDS=480V
ID=4A
10
0
10
-1
10
-2
10
0
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5



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