2SA1261-Z datasheet(2/2 Pages) ISC

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isc Silicon PNP Power Transistor

2SA1261-Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -5.0A; IB= -0.5A, L=1mH

-100

VCEX(SUS)-1

Collector-Emitter Sustaining Voltage

IC= -5.0A ; IB1=-IB2= -0.5A,

VBE(OFF)=5.0V, L=180μH,clamped

-100

VCEX(SUS)-2

Collector-Emitter Sustaining Voltage

IC= -10A ; IB1= -1.0A; IB2= -0.5A,

VBE(OFF)= 5.0V, L= 180μH,clamped

-100

VCE(sat)*

Collector-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

-0.6

VBE(sat)*

Base-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

-1.5

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-10

ICER

Collector Cutoff Current

VCE= -100V; RBE= 51Ω,Ta=125℃

-1.0

ICEX

Collector Cutoff Current

VCE= -100V; VBE(off)= -1.5V

VCE= -100V; VBE(off)= -1.5V, Ta=125℃

-10

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

hFE-1*

DC Current Gain

IC= -0.5A; VCE= -5V

200

hFE-2*

DC Current Gain

IC= -3.0A; VCE= -5V

200

hFE-3*

DC Current Gain

IC= -5.0A; VCE= -5V

Switching times

ton

Turn-on Time

IC= -5.0A, RL= 10Ω,

IB1= -IB2= -0.5A, VCC≈-50V

0.5

tstg

Storage Time

1.5

Fall Time

0.5

*:PW≤350us,duty cycle≤2%



hFE-2 Classifications

40-80

60-120

100-200

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