MSN0480D datasheet(1/6 Pages) MORESEMI

Numer części	MSN0480D

Szczegółowy opis	40V(D-S) N-Channel Enhancement Mode Power MOS FET

PDF	6 Pages

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Producent	MORESEMI [MORE Semiconductor Company Limited]

Strona internetowa	http://www.moresemi.com/

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General Features

● VDS =40V,ID =80A

RDS(ON) <6.6mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● PWM

● Load Switching

Schematic diagram

Marking and pin assignment

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN0480D

TO-252-2L

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

80

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

56

A

Pulsed Drain Current

IDM

350

A

Maximum Power Dissipation

PD

80

W

Derating factor

0.53

W/℃

Single pulse avalanche energy

(Note 5)

EAS

670

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

MSN0480D

40V(D-S) N-Channel Enhancement Mode Power MOS FET

Lead Free

PIN Configuration

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