Gate-Body Leakage Current

-

-

±5

nA

On Characteristics (Note 3)

Gate Threshold Voltage

0.45

0.85

V

-

220

310

m

Ω

Drain-Source On-State Resistance

-

260

360

m

Ω

Forward Transconductance

-

2.0

-

S

Dynamic Characteristics (Note4)

Input Capacitance

-

50

-

PF

Output Capacitance

-

13

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

8

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

-

22

nS

Turn-on Rise Time

-

80

nS

Turn-Off Delay Time

-

700

nS

Turn-Off Fall Time

-

380

nS

Total Gate Charge

-

1.15

nC

Gate-Source Charge

-

0.15

-

nC

Gate-Drain Charge

-

0.23

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

-

0.7

1.5

V

Diode Forward Current (Note 2)

-

-

0.35

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

20

-

V

Zero Gate Voltage Drain Current

-

-

100

μA

MORE Semiconductor Company Limited

http://www.moresemi.com

2/6

-

0.58

-

-

-

-

-

MSN2020