Data She et AS25 33-36

Revision 8.10

Page 22 of 25

Vertical Structure of Bond Pads

Process CXQ/CXB – FAB B

General Conditions

Passivation

200 nm silicon oxynitride + 550 nm silicon nitride

Marking of Failure Dice

Ink Dots, water resistant, Diameter 0.4...1.2 mm

Allowed Loss after Assembly

< 5% in average

< 10% for a single delivery lot

Compensation is limited to replacement of the number of defectives exceeding the above

allowances.

Quantity of dice per delivery lot Only complete wafers can be delivered, therefore the number of good dice delivered may

differ from the order quantity up to

±1000 pcs.

Storage Conditions

Dice on wafer or dice on foil must be stored in originally sealed boxes or bags.

For storage period - see below.

Except for RMA, opened boxes or bags will not be accepted by austriamicrosystems for return

Conditions for Delivery as Wafer

Wafer diameter

200 mm (ams-FAB-B) or 150 mm (XFAB)

Wafer thickness

380

± 20 m (ams-FAB-B) or 640 ± 20 m (XFAB)

Back finishing

back grinding, silicon

Scribe lane width

100

± 20 m

Packing

Wafer Box Ultrapack 200 / sealed in foil bags

Max. Storage time in sealed

box

6 month, Tamb = 25

° C

Layer Specification

metal 2

upper layer:

lower layer:

960 nm AISiCu

98.5% Aluminium

1.0% Silicon

0.5 % Copper

40 nm Titanium

metal 1

upper layer:

lower layer:

450 nm AISiCu

98.5 % Aluminium

1.0% Silicon

0.5 % Copper

40 nm Titanium

metal 1 barrier

upper layer

lower layer

80nm Titanium Nitride

30nm Titanium

polysilicon

270 nm polysilicon

oxide

460 nm thermal oxide

silicon substrate

polysilicon

Si

substrate

oxide

metal 1 barrier

metal 1

metal 2