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BD791 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BD791
Szczegółowy opis  isc Silicon NPN Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD791 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
BD791
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
2.5
V
VCE(sat)-4
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
1.8
V
VBE(on)
Base-Emitter On Voltage
IC= 0.2A; VCE= 3V
1.5
V
ICEX
Collector Cutoff Current
VCB= 100V;VBE(off)= 1.5V
VCB= 50V;VBE(off)= 1.5V;TC=125℃
1.0
0.1
μ
A
mA
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
μ
A
hFE-1
DC Current Gain
IC= 0.2A; VCE= 3V
40
250
hFE-2
DC Current Gain
IC= 1A; VCE= 3V
25
hFE-3
DC Current Gain
IC= 2A; VCE= 3V
20
hFE-4
DC Current Gain
IC= 4A; VCE= 3V
5
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
40
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 0.1MHz
50
pF



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