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2N4111 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N4111 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N4111 DESCRIPTION · Excellent Safe Operating Area · Low Collector-Emitter Saturation Voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.67 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Operating Temperature Range -65~+165 ℃ Tstg Storage Junction Temperature Range -65~+165 ℃ |
Podobny numer części - 2N4111 |
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Podobny opis - 2N4111 |
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