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3AD53 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3AD53 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistors 3AD53 DESCRIPTION · DC Current Gain- : hFE=20-140@IC= -4A · Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -4A · APPLICATIONS · Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -24 V VEBO Emitter-Base Voltage -20 V IC Collector Current-Continuous -6 A PC Collector Power Dissipation @TC=55℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ |
Podobny numer części - 3AD53 |
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Podobny opis - 3AD53 |
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