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BFP450 Arkusz danych(PDF) 9 Page - Infineon Technologies AG

Numer części BFP450
Szczegółowy opis  Linear Low Noise Silicon Bipolar RF Transistor
PDF  28 Pages
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP450 Arkusz danych(HTML) 9 Page - Infineon Technologies AG

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BFP450
Maximum Ratings
Datasheet
9
Revision 1.2, 2013-07-29
3
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1
Maximum Ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
VCEO
Open base
–4.5
V
TA = 25 °C
–4.1
V
TA = -55 °C
Collector emitter voltage
VCES
–
15
V
E-B short circuited
Collector base voltage
VCBO
–
15
V
Open emitter
Emitter base voltage
VEBO
–
1.5
V
Open collector
Collector current
IC
–170
mA
–
Base current
IB
–10
mA
–
Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot
–500
mW
TS ≤ 90 °C
Junction temperature
TJ
–150
°C
–
Storage temperature
TStg
-55
150
°C
–



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