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RMB2S Arkusz danych(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd

Numer części RMB2S
Szczegółowy opis  Small size, simple installation
PDF  5 Pages
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Producent  SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]
Strona internetowa  http://www.smc-diodes.com/
Logo SMC - Sangdest Microelectronic (Nanjing) Co., Ltd

RMB2S Arkusz danych(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd

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Technical Data
Green Products
Data Sheet N1651, Rev. -
• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com •
RMB2S-RMB6S
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified
Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.
Characteristic
Symbol
RMB2S
RMB4S
RMB6S
Units
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
RMS Reverse Voltage
VR(RMS)
140
280
420
Maximum DC blocking voltage
VDC
200
400
600
Maximum average forward current
60Hz sine save resistance load
On glass-epoxy P.C.B.
On aluminum substrate
IF(AV)
0.5
0.8
A
Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated
load (JEDEC Method)
IFSM
30
A
Maximum instantaneous forward voltage drop (Note
1)@ IF = 0.4A
VF
1.0
V
Maximum DC reverse current
TA = 25°C
at rated DC blocking voltage
TA = 125°C
IR
5
100
µA
Maximum reverse recovery time(Note 2)
trr
150
nS
Typical junction capacitance (per leg)
Cj
13
pF
Typical thermal resistance
RθJA
85
°C/W
Operating junction and storage temperature range
TJ,TSTG
-55 to +150
°C
Note: 1. Pulse Test with PW=300us, 1% Duty Cycle
2.
Reverse Recovery Test Condition: IF=0.5A, IR=1.0A, IRR=0.25A



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