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2SA700 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA700 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA700 DESCRIPTION · High Collector Current -IC= -1.5A · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) · Good Linearity of hFE · Low Saturation Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A PC Collector Power Dissipation @ TC=25℃ 8 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SA700 |
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Podobny opis - 2SA700 |
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