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BSP372N Arkusz danych(PDF) 2 Page - Infineon Technologies AG |
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BSP372N Arkusz danych(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page ![]() BSP372N Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance junction - soldering point R thJS - - 25 K/W Thermal resistance R thJA minimal footprint - - 110 junction - ambient 6 cm 2 cooling area1) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 100 - - V Gate threshold voltage V GS(th) V DS=Vgs V, I D=218 µA 0.8 1.4 1.80 Drain-source leakage current I DSS V DS=100 V, V GS=0 V, T j=25 °C - - 0.1 mA V DS=100 V, V GS=0 V, T j=150 °C - - 10 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Gate-source on-state resistance RDS(on) V GS=10 V, I D=1.8 A - 153 230 m W V GS=4.5 V, I D=1.7 A - 172 270 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.5 A 5.1 - S Values 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-03 |
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