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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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NE85634 Arkusz danych(PDF) 2 Page - NEC |
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NE85634 Arkusz danych(HTML) 2 Page - NEC |
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2 / 25 page  NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP) 18 19 30 32 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 7.0 6.5 6.5 VCE = 3 V, IC = 7 mA GHz 3.0 4.5 4.5 NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.1 1.4 1.4 1.3 1.4 VCE = 10 V, IC = 7 mA, f = 2 GHz dB 2.1 2.1 2.2 2.2 GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 13 12.5 12 10 f = 2 GHz dB 10 7 6.5 6 |S21E|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11 13 12 12 9.5 f = 2 GHz dB 7 9 7 6 hFE Forward Current Gain2 at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 VCE = 3 V, IC = 7 mA 80 120 160 40 110 250 ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA µA 1.0 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 1.0 1.0 Cre Feedback Capacitance3 at VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.7 1.5 0.7 1.5 VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.5 1.0 0.5 0.9 0.65 1.0 PT Total Power Dissipation mW 700 150 100 150 600 RTH (J-A) Thermal Resistance (J-A) °C/W 833 1000 833 210 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85633 NE85634 NE85635 NE85639/39R EIAJ1 REGISTERED NUMBER 2SC3356 2SC3357 2SC3603 2SC4093 PACKAGE OUTLINE 33 34 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 7.0 6.5 7.0 9.0 NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.4 2.0 1.4 1.5 2.1 f = 2 GHz dB 2.1 3.4 GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 9 13.5 f = 2 GHz dB 10 8.5 |S21E|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11.5 9.5 13 f = 2 GHz dB 7 9 7 hFE Forward Current Gain2 at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 50 120 300 ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA µA 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 1.0 Cre Feedback Capacitance3 at VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.55 1.0 0.65 1.0 0.5 1.0 0.5 0.9 PT Total Power Dissipation mW 200 20004 580 200 RTH (J-A) Thermal Resistance (J to A) °C/W 625 62.54 590 500 Notes: 1. Electronic Industrial Association of Japan. 2. Pulse width ≤ 350 µs, duty cycle ≤ 2% pulsed. 3. Cre measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. 4. With 2.5 cm2 x 0.7 mm ceramic substrate (infinite heatsink). |
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