IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 230N10

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

80

120

S

C

iss

21000

pF

C

oss

V

GS

= 0 V, V

5700

pF

C

rss

1500

pF

t

d(on)

60

ns

t

r

V

GS

= 10 V, V

90

ns

t

d(off)

R

G

= 1 Ω (External),

150

ns

t

f

55

ns

Q

g(on)

690

nC

Q

gs

V

GS

= 10 V, V

150

nC

Q

gd

370

nC

R

thJC

0.18 K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

I

S

V

230

A

I

SM

Repetitive;

920

A

pulse width limited by T

JM

V

SD

I

1.2

V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

250

ns

Q

RM

T

1.2

µC

I

RM

9A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004