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STM32L031X4 Arkusz danych(PDF) 75 Page - STMicroelectronics |
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STM32L031X4 Arkusz danych(HTML) 75 Page - STMicroelectronics |
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75 / 118 page  DocID027063 Rev 4 75/118 STM32L031x4/6 Electrical characteristics 95 Table 47. Flash memory and data EEPROM endurance and retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results. NCYC(2) Cycling (erase / write) Program memory TA-40°C to 105 °C 10 kcycles Cycling (erase / write) EEPROM data memory 100 Cycling (erase / write) Program memory TA-40°C to 125 °C 0.2 Cycling (erase / write) EEPROM data memory 2 tRET(2) 2. Characterization is done according to JEDEC JESD22-A117. Data retention (program memory) after 10 kcycles at TA = 85 °C TRET = +85 °C 30 years Data retention (EEPROM data memory) after 100 kcycles at TA = 85 °C 30 Data retention (program memory) after 10 kcycles at TA = 105 °C TRET = +105 °C 10 Data retention (EEPROM data memory) after 100 kcycles at TA = 105 °C Data retention (program memory) after 200 cycles at TA = 125 °C TRET = +125 °C Data retention (EEPROM data memory) after 2 kcycles at TA = 125 °C |
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