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IRF644 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF644 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel Mosfet Transistor IRF644 · FEATURES · Avalanche Rugged Technology · Rugged Gate Oxide Technology · Lower Input Capacitance · Improved Gate Charge · Extended Safe Operating Area · Lower Leakage Current: 10mA (Max.) @ VDS = 250V · DESCRITION · Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Plused 56 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃ /W RJA Junction-to-Ambient 80 ℃ /W |
Podobny numer części - IRF644 |
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Podobny opis - IRF644 |
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