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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SD1503 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1503 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc Product Specification 1 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1503 DESCRIPTION · High Collector-Base Voltage - : VCBO= 900V(Min) · High Switching Speed · Wide Area of Safe Operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Podobny numer części - 2SD1503 |
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Podobny opis - 2SD1503 |
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