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Zakładka z wyszukiwarką danych komponentów |
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2SD1523 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1523 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1523 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) · High DC Current Gain : hFE= 500(Min) @ IC= 8A, VCE= 3V · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A PC Collector Power Dissipation @Tc=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SD1523 |
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Podobny opis - 2SD1523 |
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