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2SD1673 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1673 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1673 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 1.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 100mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 100mA 2.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 20 mA hFE -1 DC Current Gain IC= 2A; VCE= 2V 600 hFE -2 DC Current Gain IC= 7A; VCE= 2V 1000 20000 |
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