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2SD900 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD900 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 300mA; IC= 0 6.0 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 0.5 mA VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A 1.5 V hFE DC Current Gain IC= 1A; VCE= 5V 10 40 VECF C-E Diode Forward Voltage IF= 6A 3.0 V tf Fall Time IC=4A, IB1= 1.1A , IB2= 1.6A 1.0 μ s |
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