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TIP41G Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części TIP41G
Szczegółowy opis  Complementary Silicon Plastic Power Transistors
PDF  7 Pages
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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TIP41G Arkusz danych(HTML) 2 Page - ON Semiconductor

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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.67
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
57
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCEO(sus)
40
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP41G, TIP41AG, TIP42G, TIP42AG
(VCE = 60 Vdc, IB = 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG
ICEO
−
−
0.7
0.7
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP41G, TIP42G
(VCE = 60 Vdc, VEB = 0)
TIP41AG, TIP42AG
(VCE = 80 Vdc, VEB = 0)
TIP41BG, TIP42BG
(VCE = 100 Vdc, VEB = 0)
TIP41CG, TIP42CG
ICES
−
−
−
−
400
400
400
400
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
30
15
−
75
−
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 600 mAdc)
VCE(sat)
−
1.5
Vdc
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
−
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.



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