ADF4355BCPZ datasheet(7/36 Pages) AD

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ADF4355

Data Sheet

Rev. A | Page 6 of 35

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

VRF, DVDD, AVDD to GND1

−0.3 V to +3.6 V

AVDD to DVDD

−0.3 V to +0.3 V

VP, VVCO to GND1

−0.3 V to +5.8 V

CPOUT to GND1

−0.3 V to VP + 0.3 V

Digital Input/Output Voltage to GND1

−0.3 V to DVDD + 0.3 V

Analog Input/Output Voltage to GND1

−0.3 V to AVDD + 0.3 V

REFINA, REFINB to GND1

−0.3 V to AVDD + 0.3 V

REFINA to REFINB

±2.1 V

Operating Temperature Range

−40°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

θJA, Thermal Impedance Pad Soldered

to GND1

27.3°C/W

Reflow Soldering

Peak Temperature

260°C

Time at Peak Temperature

40 sec

Electrostatic Discharge (ESD)

Charged Device Model

1000 V

Human Body Model

2500 V

GND = AGND = SDGND = AGNDRF = AGNDVCO = CPGND = 0 V.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

The ADF4355 is a high performance RF integrated circuit with

an ESD rating of 2500 V and is ESD sensitive. Take proper

precautions for handling and assembly.

TRANSISTOR COUNT

The transistor count for the ADF4355 is 103,665 (CMOS) and

3214 (bipolar).

ESD CAUTION

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