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ESJC60S30 Arkusz danych(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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ESJC60S30 Arkusz danych(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 1 page ![]() 0.3 25 ESJC60S30 GETE ELECTRONIC CO.,LTD n E-mail: Tel: 0086-20-8184 9628 n Fax: 0086-20-8184 9638 n www.hvgtsemi.com 01 GUANGZHOU * CHINA www.getedz.com sales@getedz.com China Tel: 4001 83 84 85 DO-722 Series Lead Diameter 1.2mm 22mm 7.5mm 24mm 300mA 30kV -High Voltage Power Diodes Features High speed switching High surge resisitivity for CRT discharge High reliability design Avalanche characteristic Applications Maximum Ratings and Characteristics Absolute Maximum Ratings High reliability resin molded type high voltage mesa type silicon chip by epoxy resin. X light Power supply Laser Voltage doubler circuit Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. Epoxy resin molded in vacuum, Have anticorrosion in the surface diode in small size package which is sealed a multilayed Outline Drawings : Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Symbols VRRM IO IFSM Tj Tc Condition Ta=25°C,Resistive Load 125 125 -40 to +125 Units kV A A peak °C °C °C Storage Temperature Tstg ESJC60S30 30 peak Ta=25°C,8.3msec, half sine Ta=25°C, I =0.1mA R Maximum Reverse Recovery Time Trr at 25°C; Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Conditions at 25°C,VR at 100°C,V Units V uA uA Junction Capacitance Cj at 25°C; V R=0V,f=1MHz -- ESJC60S30 50 5.0 pF =VRRM R =VRRM -- nS at 25°C, F 30 I =0.5I ; F I =I (AV); R I =0.25I rr R R F at: I |
Podobny numer części - ESJC60S30 |
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Podobny opis - ESJC60S30 |
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