VS-GB75TP120U datasheet(1/6 Pages) VISHAY

Numer części	VS-GB75TP120U

Szczegółowy opis	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 75 A

PDF	6 Pages

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Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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VS-GB75TP120U

www.vishay.com

Vishay Semiconductors

Revision: 10-Jun-15

1

Document Number: 94822

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Molding Type Module IGBT,

2 in 1 Package, 1200 V, 75 A

FEATURES

• High short circuit capability, self limiting to 6 x IC

• 10 μs short circuit capability

•VCE(on) with positive temperature coefficient

• Rugged with ultrafast performance

• Square RBSOA

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

Bonding) technology

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Switching mode power supplies

• Inductive heating

•UPS

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction

loss as well as short circuit ruggedness. It is designed for

applications such as general inverters and UPS.

Note

(1) Repetitive rating: pulse width limited by maximum junction temperature.

PRODUCT SUMMARY

VCES

1200 V

IC at TC = 80 °C

75 A

VCE(on) (typical)

at IC = 75 A, 25 °C

3.2 V

Speed

8 kHz to 30 kHz

Package

INT-A-PAK

Circuit

Half bridge

INT-A-PAK

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

VCES

1200

V

Gate to emitter voltage

VGES

± 20

Collector current

IC

TC = 25 °C

105

A

TC = 80 °C

75

Pulsed collector current

ICM (1)

tp = 1 ms

150

Diode continuous forward current

IF

75

Diode maximum forward current

IFM

150

Maximum power dissipation

PD

TJ = 150 °C

500

W

Short circuit withstand time

tSC

TJ = 125 °C

10

μs

RMS isolation voltage

VISOL

f = 50 Hz, t = 1 min

2500

V

I2t-value, diode

I2tVR = 0 V, t = 10 ms, TJ = 125 °C

1170

A2s

Podobny numer części - VS-GB75TP120U

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	VS-GB75TP120N	127Kb / 7P	High short circuit capability, self limiting to 6 x I 10-Jun-15

More results

Podobny opis - VS-GB75TP120U

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	VS-GB50TP120N	97Kb / 6P	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A 10-Jun-15
	VS-GB75LP120N	124Kb / 7P	Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A 10-Jun-15
	VS-GB100TH120U	167Kb / 8P	Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB100TP120N	97Kb / 6P	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A 10-Jun-15
	VS-GB150TH120N	165Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A 10-Jun-15
	VS-GB150TH120U	126Kb / 7P	Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A 10-Jun-15
	VS-GB200TH120N	165Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A 12-Jun-15
	VS-GT50TP120N	97Kb / 6P	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A 11-Jun-15
	VS-GT75NP120N	94Kb / 6P	Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A 11-Jun-15
	VS-GT400TH120U	297Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A 12-Jun-15

More results

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