VS-GT400TH120N datasheet(1/6 Pages) VISHAY

Numer części	VS-GT400TH120N

Szczegółowy opis	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A

PDF	6 Pages

Scroll/Zoom	100%

Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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VS-GT400TH120N

www.vishay.com

Vishay Semiconductors

Revision: 12-Jun-15

1

Document Number: 94748

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Molding Type Module IGBT,

2-in-1 Package, 1200 V and 400 A

FEATURES

•Low VCE(on) trench IGBT technology

• Low switching losses

• 10 μs short circuit capability

•VCE(on) with positive temperature coefficient

• Maximum junction temperature 150 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

Bonding) technology

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•UPS

• Inverter for motor drive

• AC and DC servo drive amplifier

DESCRIPTION

Vishay’s IGBT power module provides ultralow conduction

loss as well as short circuit ruggedness. It is designed for

applications such as general inverters and UPS.

Note

(1) Repetitive rating: pulse width limited by maximum junction temperature.

PRODUCT SUMMARY

VCES

1200 V

IC at TC = 80 °C

400 A

VCE(on) (typical)

at IC = 400 A, 25 °C

1.70 V

Speed

8 kHz to 30 kHz

Package

Double INT-A-PAK

Circuit

Half bridge

Double INT-A-PAK

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

VCES

1200

V

Gate to emitter voltage

VGES

± 20

Collector current

IC

TC = 25 °C

600

A

TC = 80 °C

400

Pulsed collector current

ICM (1)

tp = 1 ms

800

Diode continuous forward current

IF

TC = 80 °C

400

Diode maximum forward current

IFM

tp = 1 ms

800

Maximum power dissipation

PD

TJ = 150 °C

2119

W

Short circuit withstand time

tSC

TJ = 125 °C

10

μs

RMS isolation voltage

VISOL

f = 50 Hz, t = 1 min

2500

V

Podobny numer części - VS-GT400TH120N

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	VS-GT400TH120U	297Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A 12-Jun-15

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Podobny opis - VS-GT400TH120N

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	VS-GB100TH120N	163Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB100TH120U	167Kb / 8P	Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB150TH120N	165Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A 10-Jun-15
	VS-GB150TH120U	126Kb / 7P	Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A 10-Jun-15
	VS-GB200TH120N	165Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A 12-Jun-15
	VS-GB400AH120U	108Kb / 6P	Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A 22-Oct-15
	VS-GT400TH60N	165Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A 12-Jun-15
	VS-GT400TH120U	297Kb / 7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A 12-Jun-15
	VS-GB400AH120U	108Kb / 6P	Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A 22-Oct-15

More results

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