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HFS2N65FS Arkusz danych(PDF) 1 Page - SemiHow Co.,Ltd.

Numer części HFS2N65FS
Szczegółowy opis  650V N-Channel MOSFET
PDF  8 Pages
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HFS2N65FS
650V N-Channel MOSFET
Oct 2016
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
100% Avalanche Tested
Single Gauge Package
Parameter
Value
Unit
BVDSS
650
V
ID
2A
RDS(on), Typ
4
Qg,Typ
6.5
nC
Key Parameters
Features
Symbol
Parameter
Value
Unit
V
DSS
Drain-Source Voltage
650
V
I
D
Drain Current
– Continuous (T
C = 25
)
2.0 *
A
Drain Current
– Continuous (T
C = 100
)
1.3 *
A
I
DM
Drain Current
– Pulsed
(Note 1)
8.0 *
A
V
GS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
110
mJ
I
AR
Avalanche Current
(Note 1)
2.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C = 25
)
- Derate above 25
23
W
0.18
W/
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
Symbol
Parameter
Value
Unit
R
JC
Thermal Resistance, Junction-to-Case, Max.
5.5
/W
R
JA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
/W
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Absolute Maximum Ratings T
C=25
unless otherwise specified
TO-220FS
Symbol
G
D
S


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