STPSC6H12 datasheet(1/8 Pages) STMICROELECTRONICS

Numer części	STPSC6H12

Szczegółowy opis	1200 V power Schottky silicon carbide diode

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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This is information on a product in full production.

September 2016

DocID024631 Rev 5

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STPSC6H12

1200 V power Schottky silicon carbide diode

Datasheet

- production data

Features

 High frequency free-wheel / boost diode

 Robust high-voltage periphery

 Ultrafast high voltage switching independent of

temperature

Description

ST's 1200 V high-performance rectifier is

specifically designed to be used in photo-voltaic

inverters or in applications where negligible

switching losses are required.

The STPSC6H12 helps to increase the

application efficiency yield by up to 2% thanks to

its ability to work at high frequency whatever the

temperature.

The central lead of the DPAK package is removed

to meet the IEC60664 and UL 840 standard

requirements for a higher voltage.

These characteristics make it the best-in-class

1200 V diode.

Table 1. Device summary

Symbol

Value

IF(AV)

6 A

VRRM

1200 V

Tj (max.)

175 °C

VF (6 A, 25 °C) typ.

1.55 V

Cj (300 V) typ.

30 pF

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Podobny opis - STPSC6H12

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STPSC10H12	438Kb / 8P	1200 V power Schottky silicon carbide diode 03-May-2016
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	STPSC10H12-Y	534Kb / 10P	Automotive grade 1200 V power Schottky silicon carbide diode 23-Jan-2017
	STPSC10H12B2-TR	224Kb / 11P	1200 V, 10 A, silicon carbide power Schottky diode 31-Aug-2020
	STPSC15H12G2-TR	375Kb / 11P	1200 V, 15 A, silicon carbide power Schottky diode Rev 1 - August 2020
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