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ACST1235-8FP Arkusz danych(PDF) 5 Page - STMicroelectronics |
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ACST1235-8FP Arkusz danych(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() DocID026033 Rev 1 5/13 ACST1235-8FP Characteristics 13 Figure 12. Relative variation of critical rate of decrease of main current versus junction temperature (typical values) Figure 13. Relative variation of static dV/dt immunity versus junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 Tj(°C) (dI/dt) C [Tj]/ (dI/dt)c [Tj=150 °C] 0 1 2 3 4 25 50 75 100 125 150 Tj(°C) dV/dt [T j ] / dV/dt [T j = 150 °C] V D = VR = 536 V Device exceeding dV/dt = 5 kV/μs Figure 14. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) Figure 15. Relative variation of the maximum clamping voltage versus junction temperature (minimum values) 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 25 50 75 100 125 150 V DRM=VRRM = 800 V V DRM=VRRM = 600 V V DRM=VRRM = 400 V IDRM / IRRM[Tj;VDRM / VRRM] / IDRM / IRRM Tj (°C) V [T ] / V [T = 25 °C] CL j CL j 0.85 0.90 0.95 1.00 1.05 1.10 -50 -25 0 25 50 75 100 125 150 Tj(°C) |
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