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STB120N10F4 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STB120N10F4 Arkusz danych(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() DocID026168 Rev 1 5/18 STB120N10F4, STP120N10F4 Electrical characteristics 18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 120 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 390 A V SD (2) 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 60 A, V GS = 0 - 1.2 V t rr Reverse recovery time I SD = 120 A, V DD = 80 V di/dt = 100 A/μs, T j = 150 °C (see Figure 15) -72 ns Q rr Reverse recovery charge - 215 nC I RRM Reverse recovery current - 6 A |
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