STP2N105K5 datasheet(4/21 Pages) STMICROELECTRONICS

4 / 21 page

Electrical characteristics

STD2N105K5, STP2N105K5, STU2N105K5

4/21

DocID026321 Rev 3

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

1050

IDSS

Zero gate voltage,

drain current (VGS = 0)

VDS = 1050 V

µA

VDS = 1050 V, TC=125 °C

µA

IGSS

Gate-body leakage

current

VGS = ± 20 V; VDS=0

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 0.75 A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-115

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-0.5

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

VGS = 0, VDS = 0 to 840 V

-17

Co(er)

(2)

energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-6

Intrinsic gate resistance

f = 1 MHz open drain

Total gate charge

VDD = 840 V, ID = 1.5 A

VGS =10 V

(see Figure 18)

-10

Qgs

Gate-source charge

1.5

Qgd

Gate-drain charge

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