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STD40P3LLH6 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STD40P3LLH6 Arkusz danych(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STD40P3LLH6 Electrical characteristics DocID025821 Rev 4 5/16 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD = -40 A, VGS = 0 - -1.1 V trr Reverse recovery time ISD = -40 A, di/dt = 100 A/µs VDD = -24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 20 ns Qrr Reverse recovery charge - 16 nC IRRM Reverse recovery current - -1.6 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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