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STF6N65M2 Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STF6N65M2
Szczegółowy opis  Extremely low gate charge
PDF  18 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF6N65M2 Arkusz danych(HTML) 5 Page - STMicroelectronics

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STF6N65M2, STP6N65M2, STU6N65M2
Electrical characteristics
18
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
4
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
16
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 4 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17)
-
260
ns
Qrr
Reverse recovery charge
-
1.2
µC
IRRM
Reverse recovery current
-
9.2
A
trr
Reverse recovery time
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17)
-
400
ns
Qrr
Reverse recovery charge
-
1.84
µC
IRRM
Reverse recovery current
-
9.1
A



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