STF11N65M2 datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

STF11N65M2, STFI11N65M2

Electrical ratings

DocID025806 Rev 2

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

4.4

IDM(2)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(3)(4)

Peak diode recovery voltage slope

V/ns

dv/dt(5)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s, TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) The value is rated according to Rthj-case and limited by package.

(2) Pulse width limited by Tjmax.

(3) starting Tj = 25 °C, ID = IAS, VDD = 50 V.

(4) ISD ≤ 7 A, di/dt=400 A/μs, VDS peak < V(BR)DSS VDD = 80% V(BR)DSS.

(5) VDS ≤ 520 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

1.5

EAS(2)

Single pulse avalanche energy

110

Notes:

(1) Pulse width limited by Tjmax.

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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